BLF7G22LS-200,112 NXP Semiconductors, BLF7G22LS-200,112 Datasheet - Page 10

• Manufacturer Part Number: BLF7G22LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29.5A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 30W
• Mounting Style: SMD/SMT
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29.5 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18.9S
• Drain Source Resistance (max): 54(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 31%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF7G22L-200_7G22LS-200
Preliminary data sheet
CAUTION
Document ID
BLF7G22L-200_7G22LS-200 v.3 20110401
Modifications:
BLF7G22L-200_7G22LS-200 v.2 20101228
BLF7G22L-200_7G22LS-200 v.1 20100419
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Release date Data sheet status
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•
•
•
•
•
•
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Abbreviations
Table 1 on page
Table 7 on page
Table 7 on page
Figure 3 on page
Figure 6 on page
Section 7.2 on page
Section 7.6 on page
Section 9 on page
front page
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G22L-200; BLF7G22LS-200
Preliminary data sheet -
Objective data sheet
Preliminary data sheet -
Rev. 3 — 1 April 2011
1: the term PDPCH has been changed to DPCH
3: the term PDPCH has been changed to DPCH
3: several values have been changed
4: the value of the frequency has been changed in the conditions
5: the frequency has been added as a condition
10: this section replaces the caution that was previously on the
4: section has been added
7: section has been added
Change notice Supersedes
-
BLF7G22L-200_7G22LS-200
v.2
BLF7G22L-200_7G22LS-200
v.1
-
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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