BLF7G22LS-200,112 NXP Semiconductors, BLF7G22LS-200,112 Datasheet - Page 7

• Manufacturer Part Number: BLF7G22LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29.5A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 30W
• Mounting Style: SMD/SMT
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29.5 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18.9S
• Drain Source Resistance (max): 54(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 31%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G22L-200_7G22LS-200
Preliminary data sheet
Fig 11. Component layout
See
Table 9
7.6 Test circuit
for list of components.
9 mm
Table 9.
See
[1]
[2]
Component
C1
C2, C3
C4, C5, C6, C7, C8
C9
C10
C11
C12
C13, C14
C15
R1
18 mm
C9
C1
TDK or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
Figure 11
R1
50.000 mm
List of components
C10
for component layout.
All information provided in this document is subject to legal disclaimers.
BLF7G22L-200; BLF7G22LS-200
C4
C5
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Rev. 3 — 1 April 2011
11 mm
C13
C14
C8
C6
C3
C2
C7
50.000 mm
C15
Value
10 μF
4.7 μF
22 pF
2.0 pF
2.1 pF
0.5 pF
0.9 pF
330 nF
470 μF; 63 V
10 Ω
Power LDMOS transistor
C11
001aan552
C12
© NXP B.V. 2011. All rights reserved.
[1]
[1]
[2]
[2]
[2]
[2]
[2]
[1]
Remarks
TDK
TDK
ATC100B
ATC100B
ATC100B
ATC100B
ATC100B
TDK
Philips 1206
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