BLF7G22LS-200,112 NXP Semiconductors, BLF7G22LS-200,112 Datasheet - Page 5
![TRANSISTOR PWR LDMOS SOT502](/photos/27/8/270806/sot502b_sml.jpg)
BLF7G22LS-200,112
Manufacturer Part Number
BLF7G22LS-200,112
Description
TRANSISTOR PWR LDMOS SOT502
Manufacturer
NXP Semiconductors
Specifications of BLF7G22LS-200,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
29.5A
Current - Test
1.62A
Voltage - Test
28V
Power - Output
30W
Mounting Style
SMD/SMT
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
29.5 A
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
30W(Typ)
Power Gain (typ)@vds
18.5@28VdB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
18.9S
Drain Source Resistance (max)
54(Typ)@6.05Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
31%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
BLF7G22L-200_7G22LS-200
Preliminary data sheet
Fig 4.
Fig 6.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
p
0
V
at 0.01 % probability on the CCDF.
Power gain and drain efficiency as functions
of average load power; typical values
V
Adjacent power channel ratio (5 MHZ) as function of average load power; typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
D
p
20
7.4 1-carrier W-CDMA
Dq
Dq
= 1620 mA; f = 2140 MHz; PAR = 7.2 dB
= 1620 mA; PAR = 7.2 dB at 0.01 % probability on the CCDF.
40
60
ACPR
(dBc)
−25
−35
−45
−55
5M
0
80
All information provided in this document is subject to legal disclaimers.
P
001aan066
L(AV)
BLF7G22L-200; BLF7G22LS-200
(W)
20
100
50
40
30
20
10
0
Rev. 3 — 1 April 2011
(%)
η
D
40
Fig 5.
60
PAR
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
8
6
4
2
30
V
probability on the CCDF.
Peak-to-average power ratio as function of
peak power; typical values
80
DS
P
001aan068
L(AV)
= 28 V; I
(1)
(2)
(3)
(W)
100
Dq
110
= 1620 mA; PAR = 7.2 dB at 0.01 %
(1)
(2)
(3)
Power LDMOS transistor
190
P
© NXP B.V. 2011. All rights reserved.
L(M)
001aan067
(W)
270
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