KIT33937AEKEVBE Freescale Semiconductor, KIT33937AEKEVBE Datasheet - Page 13

Power Management Modules & Development Tools 3-PHASE FET PRE-DRIV

KIT33937AEKEVBE

Manufacturer Part Number
KIT33937AEKEVBE
Description
Power Management Modules & Development Tools 3-PHASE FET PRE-DRIV
Manufacturer
Freescale Semiconductor
Type
MOSFET & Power Driverr
Datasheet

Specifications of KIT33937AEKEVBE

Interface Type
SPI
Product
Power Management Modules
Silicon Manufacturer
Freescale
Silicon Core Number
MC33937
Kit Application Type
Power Management
Application Sub Type
FET Driver
Kit Contents
Board, CD
Rohs Compliant
Yes
For Use With/related Products
MC33937
Table 4. Static Electrical Characteristics (continued)
values noted reflect the approximate parameter means at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
SUPERVISORY AND CONTROL CIRCUITS
THERMAL WARNING
Notes
Logic Inputs (Px_LS, Px_HS, EN1, EN2)
Logic Inputs (SI, SCLK,
Input Logic Threshold Hysteresis
Input Pull-down Current, (Px_LS, SI, SCLK, EN1, EN2)
Input Pull-up Current, (CS, Px_HS)
Input Capacitance
RST Threshold
RST Pull-down Resistance
Power-ON RST Threshold, (V
SO High Level Output Voltage
SO Low Level Output Voltage
SO Tri-state Leakage Current
SO Tri-state Capacitance
INT High Level Output Voltage
INT Low Level Output Voltage
Thermal Warning Temperature
Thermal Hysteresis
30.
31.
32.
33.
34.
35.
Characteristics noted under conditions 8.0 V
High Level Input Voltage Threshold
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Low Level Input Voltage Threshold
Inputs Px_LS, SI, SCLK,
0.3 V
0
0.0 V
0.3 V
I
I
CS = 0.7 V
0.0 V
I
I
OH
OL
OH
OL
This parameter is guaranteed by design, not production tested.
Logic threshold voltages derived relative to a 3.3 V 10% system.
Pull-up circuits will not allow back biasing of V
There are two elements in the RST circuit: 1) one generally lower threshold enables the internal regulator; 2) the second removes the
reset from the internal logic.
This parameter applies to the OFF state (tri-stated) condition of SO is guaranteed by design but is not production tested.
The Thermal Warning circuit does not force IC shutdown above this temperature. It is possible to set a bit in the MASK register to
generate an interrupt when overtemperature is detected, and the status bit will always indicate if any of the three individual Thermal
Warning circuits in the IC sense a fault.
= 1.0 mA
= 500 µA
V
= 1.0 mA
= -500 µA
DD
IN
DD
V
V
IN
IN
0.7 V
V
V
DD
IN
IN
(33)
5.5 V
, 0.3 V
5.5 V
DD
(30)
V
V
(30)
DD
DD
DD
CS
(30),
= V
)
Characteristic
CS
(30),
DD
SO
(34)
, Px_HS, EN1, EN2
(30),
(31)
Falling)
= 0.7 V
(30)
(32)
(35)
DD
(31)
DD.
V
PWR
= V
SUP
A
= 25°C under nominal conditions, unless otherwise noted.
40 V -40 C
I
SO_LEAK_T
V
Symbol
V
T
C
T
V
TH_RST
R
V
I
I
V
THRST
V
V
WARN
INPD
INPU
V
V
C
HYST
V
V
SO_T
IHYS
SOH
SOL
RST
OH
OL
IH
IL
IH
IL
IN
T
A
0.85 V
0.9 V
135 C, unless otherwise noted. Typical
Min
100
-1.0
150
0.9
0.9
8.0
1.0
3.4
8.0
10
40
STATIC ELECTRICAL CHARACTERISTICS
DD
DD
ELECTRICAL CHARACTERISTICS
Typ
250
170
4.0
15
60
15
10
0.1 V
Max
V
450
185
2.1
2.1
2.1
4.5
1.0
0.5
18
25
85
12
DD
DD
Unit
mV
µA
µA
pF
k
µA
pF
°C
°C
V
V
V
V
V
V
V
V
33937
13

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