AP602-PCB900 TriQuint, AP602-PCB900 Datasheet - Page 5

RF Modules & Development Tools 869-960MHz Eval Brd 15.5dB Gain

AP602-PCB900

Manufacturer Part Number
AP602-PCB900
Description
RF Modules & Development Tools 869-960MHz Eval Brd 15.5dB Gain
Manufacturer
TriQuint
Datasheet

Specifications of AP602-PCB900

Board Size
6 mm x 5 mm x 1 mm
Minimum Frequency
869 MHz
Minimum Operating Temperature
- 40 C
Supply Voltage (min)
28 V
Product
RF Development Tools
Maximum Frequency
960 MHz
Output Power
4 W
Supply Voltage (max)
80 V
Supply Current
112 mA
Maximum Operating Temperature
+ 85 C
For Use With/related Products
AP602
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1067319

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP602-PCB900
Manufacturer:
WJ
Quantity:
20 000
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Typical WCDMA Performance at 25 °C
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
-40
-45
-50
-55
-60
-65
16
15
14
13
12
11
at a channel power of +27 dBm
18
26
1930 MHz
1960 MHz
1990 MHz
1930 MHz
1960 MHz
1990 MHz
ACLR1 vs. Output Power vs. Frequency
AP602
High Dynamic Range 4W 28V HBT Amplifier
Gain vs. Output Power vs. Frequency
20
28
Average Output Power (dBm)
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
Output Power (dBm)
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
1930-1990 MHz Application Circuit Performance Plots
1930-1990 MHz Application Circuit (AP602-PCB1960)
22
30
24
32
+35.5 dBm
1960 MHz
+27 dBm
103 mA
C30
26
14.2 dB
-50 dBc
-51 dBc
80 mA
34
+28 V
12 dB
17 %
+5 V
9 dB
28
36
-40
-50
-60
-70
-80
-10
-15
-20
-25
-5
0
22
1.8
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.1° @ 1960 MHz) from the center C2.
4. The center of C2 is placed at 0.135” (11.5° @ 1960 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.580” (49.6° @ 1960 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C
IMD3L
IMD3U
IMD5
S11
S22
1.85
24
Output Power, PEP (dBm)
S11, S22 vs. Frequency
IMD vs. Output Power
Vcc = 28V, Icq = 80 mA, 25 ˚C
1.9
Frequency (GHz)
26
See note 3
1.95
4.7 nH
L3
28
2
30
C2
2.7pF
See note 4
2.05
1000pF
C7
32
2.1
Specifications and information are subject to change without notice
60
50
40
30
20
10
0
25
20
15
10
5
0
16
18
1930 MHz
1960 MHz
1990 MHz
Efficiency vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
1930 MHz
1960 MHz
1990 MHz
20
20
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
Average Output Power (dBm)
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
Output Power (dBm)
24
22
W = .030”
L = .980”
Page 5 of 11 May 2007 ver 1
28
24
C27
10pF
C30
2.4pF
See note 5
32
26
36
28

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