AP602-PCB900 TriQuint, AP602-PCB900 Datasheet - Page 6

• Manufacturer Part Number: AP602-PCB900
• Description: RF Modules & Development Tools 869-960MHz Eval Brd 15.5dB Gain
• Manufacturer: TriQuint

Specifications of AP602-PCB900

• Board Size: 6 mm x 5 mm x 1 mm
• Minimum Frequency: 869 MHz
• Minimum Operating Temperature: - 40 C
• Supply Voltage (min): 28 V
• Product: RF Development Tools
• Maximum Frequency: 960 MHz
• Output Power: 4 W
• Supply Voltage (max): 80 V
• Supply Current: 112 mA
• Maximum Operating Temperature: + 85 C
• For Use With/related Products: AP602
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1067319

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
Frequency
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Typical Performance at 25 °C at an
15
14
13
12
11
10
-40
-44
-48
-52
-56
28
16
output power of +27 dBm
3C-TDSCDMA, PAR = 9.6 dB
@0.01% prob, BW = 1.28MHz,
Sample clk = 32 MHz
IQ Mod Filter = 2.1 MHz
-40 ˚C
25 ˚C
85 ˚C
AP602
High Dynamic Range 4W 28V HBT Amplifier
Gain vs. Output Power vs. Temperature
Icq = 80mA
Icq=100mA
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
30
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
ACLR vs. Output Power vs. Icq
3-carrier TDSCDMA, Vcc = 28V, 2015MHz
18
Average Output Power (dBm)
Output Power (dBm)
2010-2025 MHz Application Circuit Performance Plots
32
20
34
22
2015 MHz
+27 dBm
+36 dBm
110 mA
13.7 dB
-44 dBc
16.5 %
80 mA
36
8.5 dB
+28 V
12 dB
+5 V
2010-2025 MHz Application Circuit
24
38
26
-10
-15
-20
-25
-5
10
0
1.96
8
6
4
2
0
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.3° @ 2015 MHz) from the center of C2.
4. The center of C2 is placed at 0.135” (11.8° @ 2015 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.530” (50.9° @ 2015 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
16
S11
S22
3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz
1.98
18
Average Output Power (dBm)
S11, S22 vs. Frequency
Efficiency vs. Output Power
Vcc = 28V, Icq = 80 mA, 25 ˚C
2
Frequency (GHz)
20
See note 3
2.02
4.7 nH
L3
22
2.04
C2
2.7pF
See note 4
2.06
1000pF
24
C7
1000pF
100pF
C7
2.08
Specifications and information are subject to change without notice
26
50
40
30
20
10
0
-40
-50
-60
-70
-80
20
22
Efficiency vs. Output Power vs. Temperature
-40 ˚C
25 ˚C
85 ˚C
CW 2-tone signal, 2015 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C
IMD3L
IMD3U
IMD5
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
24
24
Output Power, PEP (dBm)
Output Power (dBm)
IMD vs. Output Power
W = .030”
L = .980”
26
28
Page 6 of 11 May 2007 ver 1
28
C27
10pF
32
C30
2.4pF
See note 5
30
36
32