FP40R12KE3 Infineon Technologies, FP40R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FP40R12KE3
• Description: IGBT Modules 1200V 40A PIM
• Manufacturer: Infineon Technologies

Specifications of FP40R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.3 V
• Continuous Collector Current At 25 C: 55 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 55A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Packages: AG-ECONO2-1
• Ic (max): 40.0 A
• Vce(sat) (typ): 1.8 V
• Technology: IGBT3
• Housing: EconoPIM™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
9
8
7
6
5
4
3
2
1
0
16
14
12
10
0
8
6
4
2
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
10
10
Eon
Eoff
Erec
Eon
Eoff
Erec
20
FP40R12KE3
20
30
R
I
C
G
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
30
= f (I
40
= f (R
C
), E
G
), E
GE
off
V
= +-15 V ,
off
GE
= f (I
50
= ±15 V,
= f (R
40
C
), E
G
), E
rec
I
c
60
= I
= f (I
rec
nenn
R
Gon
= f (R
C
,
)
= R
50
V
V
CC
CC
G
Goff
70
)
=
=
=
DB-PIM-IGBT3_2Serie.xls
600 V
27 Ohm
600 V
80
60