FP40R12KE3 Infineon Technologies, FP40R12KE3 Datasheet - Page 8
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FP40R12KE3
Manufacturer Part Number
FP40R12KE3
Description
IGBT Modules 1200V 40A PIM
Manufacturer
Infineon Technologies
Specifications of FP40R12KE3
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.3 V
Continuous Collector Current At 25 C
55 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
200 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM2
Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
55A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Rohs Compliant
Yes
Packages
AG-ECONO2-1
Ic (max)
40.0 A
Vce(sat) (typ)
1.8 V
Technology
IGBT3
Housing
EconoPIM 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FP40R12KE3
Manufacturer:
FUJI
Quantity:
165
Part Number:
FP40R12KE3
Quantity:
112
Company:
Part Number:
FP40R12KE3G
Manufacturer:
INFINEON
Quantity:
210
Company:
Part Number:
FP40R12KE3G
Manufacturer:
SEMIKRON
Quantity:
726
Part Number:
FP40R12KE3G
Quantity:
113
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
90
80
70
60
50
40
30
20
10
1
0
0,001
0
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
Sicherer Arbeitsbereich IGBT-Wechselr. (RBSOA)
Reverse bias save operating area (RBSOA)
200
IC,Modul
IC,Chip
Zth-IGBT
Zth-FWD
0,01
400
FP40R12KE3
V
600
t [s]
CE
8(11)
[V]
0,1
Ri und ti-Werte siehe S. 4
Ri and ti-Values see P. 4
800
V
Z
GE
thJC
= 15V, T
= f (t)
1000
j
= 125°C
1
1200
DB-PIM-IGBT3_2Serie.xls
1400
10