SI4628DY-T1-GE3 Vishay, SI4628DY-T1-GE3 Datasheet

MOSFET Power 30V 38A 7.8W 3.0mohm @ 10V

SI4628DY-T1-GE3

Manufacturer Part Number
SI4628DY-T1-GE3
Description
MOSFET Power 30V 38A 7.8W 3.0mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SI4628DY-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.003 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
73 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25.4 A
Power Dissipation
3500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
38mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 64811
S09-0871-Rev. A, 18-May-09
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
C
G
S
S
S
= 25 °C.
N-Channel 30-V (D-S) MOSFET with Schottky Diode
0.0038 at V
0.0030 at V
1
2
3
4
R
DS(on)
Top View
GS
GS
SO-8
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, d
8
7
6
5
I
D
D
D
D
D
38
33
(A)
a
A
Q
27.5 nC
= 25 °C, unless otherwise noted
g
Steady State
(Typ.)
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• SkyFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Definition
Power MOSFET and Schottky Diode
Notebook CPU Core
Buck Converter
Symbol
R
R
thJA
thJF
N-Channel MOSFET
Symbol
T
®
J
g
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
and UIS Tested
D
S
D
Monolithic TrenchFET
stg
G
Typ.
29
13
D
S
- 55 to 150
25.4
3.1
3.5
2.2
Limit
20
± 20
101
7.8
30
38
30
70
45
7
5
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
Schottky Diode
®
Max.
35
16
Gen III
Si4628DY
www.vishay.com
Unit
mJ
°C
W
V
A
°C/W
Unit
1

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SI4628DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4628DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On -State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 64811 S09-0871-Rev. A, 18-May- 1.5 2.0 2 Si4628DY Vishay Siliconix ° 125 ° 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 4500 C iss 3600 2700 1800 C oss 900 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage - Temperature (°C) J Reverse Current (Schottky) www.vishay.com 4 0.015 0.012 0.009 °C J 0.006 0.003 0.000 0.6 0.8 1.0 100 125 150 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4628DY Vishay Siliconix 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 125 ...

Page 6

... Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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