SI4628DY-T1-GE3 Vishay, SI4628DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4628DY-T1-GE3
• Description: MOSFET Power 30V 38A 7.8W 3.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4628DY-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 38mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4628DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
10
10
10
10
10
10
100
0.1
10
-1
-2
-3
-4
-5
-6
1
0.0
0
Source-Drain Diode Forward Voltage
25
0.2
V
Reverse Current (Schottky)
SD
- Source-to-Drain Voltage (V)
T
T
20 V
50
J
J
= 150 °C
- Temperature (°C)
0.4
10 V
30 V
75
0.6
0.01
100
100
0.1
10
Limited by R
1
T
0.01
J
= 25 °C
* V
0.8
Single Pulse
125
T
A
GS
= 25 °C
> minimum V
DS(on)
V
0.1
DS
150
1.0
Safe Operating Area
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.015
0.012
0.009
0.006
0.003
0.000
10
200
160
120
80
40
is specified
0
0
0 .
0
0
1
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
1
100
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S09-0871-Rev. A, 18-May-09
5
Document Number: 64811
T
T
J
J
6
= 125 °C
= 25 °C
7
1
I
D
8
= 20 A
9
10
1
0