SI4628DY-T1-GE3 Vishay, SI4628DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4628DY-T1-GE3
• Description: MOSFET Power 30V 38A 7.8W 3.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4628DY-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 38mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64811
S09-0871-Rev. A, 18-May-09
0.0035
0.0032
0.0029
0.0026
0.0023
0.0020
70
56
42
28
14
10
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
V
On-Resistance vs. Drain Current
GS
GS
V
0.5
14
12
DS
V
= 10 V
= 4.5 V
DS
Output Characteristics
Q
= 10 V
V
g
- Drain-to-Source Voltage (V)
I
GS
V
D
- Total Gate Charge (nC)
DS
- Drain Current (A)
Gate Charge
= 10 V thru 3 V
1.0
28
24
= 15 V
V
DS
= 20 V
1.5
42
36
V
GS
2.0
56
48
= 2 V
2.5
70
60
4500
3600
2700
1800
900
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
= 20 A
0.6
6
T
V
V
C
Transfer Characteristics
GS
DS
T
C
0
= 125 °C
J
C
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
oss
T
C
Capacitance
25
= 25 °C
1.2
12
V
Vishay Siliconix
50
GS
= 10 V
1.8
18
75
V
Si4628DY
GS
www.vishay.com
= 4.5 V
T
100
C
2.4
24
= - 55 °C
125
150
3.0
30
3