ZXM62N03GTA Diodes Inc, ZXM62N03GTA Datasheet

MOSFET Power 30V N-Chnl HDMOS

ZXM62N03GTA

Manufacturer Part Number
ZXM62N03GTA
Description
MOSFET Power 30V N-Chnl HDMOS
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXM62N03GTA

Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.7 A
Power Dissipation
3900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Fall Time
6.4 ns
Rise Time
5.6 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM62N03GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
·
·
·
·
·
APPLICATIONS
·
·
·
·
ORDERING INFORMATION
DEVICE MARKING
·
ISSUE 1 - OCTOBER 2002
DEVICE
ZXM62N03GTA
ZXM62N03GTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC-DC Converters
Audio Output Stage
Relay and Soleniod driving
Motor Control
ZXM6
2N03
= 30V: R
DS(on)
REEL
SIZE
7”
13”
= 0.11 : I
TAPE
WIDTH
12mm
12mm
D
= 4.7A
QUANTITY
PER REEL
1000 units
4000 units
1
ZXM62N03G
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ZXM62N03GTA Summary of contents

Page 1

... APPLICATIONS · DC-DC Converters · Audio Output Stage · Relay and Soleniod driving · Motor Control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXM62N03GTA 7” 12mm ZXM62N03GTC 13” 12mm DEVICE MARKING · ZXM6 2N03 ISSUE 1 - OCTOBER 2002 = 4.7A D QUANTITY PER REEL ...

Page 2

ZXM62N03G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power ...

Page 3

ISSUE 1 - OCTOBER 2002 ZXM62N03G 3 ...

Page 4

ZXM62N03G ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...

Page 5

TYPICAL CHARACTERISTICS 100 +25°C 10V 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 100 VDS=10V 10 T=150°C T=25°C 1 0.1 2 2.5 3 3.5 4 4.5 VGS - Gate-Source Voltage (V) Typical ...

Page 6

ZXM62N03G TYPICAL CHARACTERISTICS 900 800 700 600 500 400 300 200 100 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms 5 I =2.2A D Vgs=0V 4.5 f=1Mhz ...

Page 7

PACKAGE OUTLINE PAD LAYOUT DETAILS 4.6 2.0 min 2.3 1.5 min (3x) 6.8 2.0 min 3.8 min © Zetex plc 2002 Europe Zetex plc Zetex GmbH Fields New Road Streitfeldstraße 19 Chadderton D-81673 München Oldham, OL9 8NP United Kingdom Germany ...

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