ZXM62N03GTA Diodes Inc, ZXM62N03GTA Datasheet - Page 5

• Manufacturer Part Number: ZXM62N03GTA
• Description: MOSFET Power 30V N-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM62N03GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 6.4 ns
• Rise Time: 5.6 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 1 - OCTOBER 2002
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
2
Typical Transfer Characteristics
On-Resistance v Drain Current
VGS=3V
+25°C
VDS=10V
T=150°C
2.5
T=25°C
V
VGS - Gate-Source Voltage (V)
DS
Output Characteristics
3
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
10V
3.5
VGS=4.5V
1
1
8V
4
7V
TYPICAL CHARACTERISTICS
6V
4.5
VGS=10V
10
10
5
5.5
VGS
5V
4V
3V
4.5V
3.5V
6
100
100
6.5
5
100
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-100
0.1
0.2
Normalised R
+150°C
V
Tj - Junction Temperature (°C)
V
-50
0.4
DS
SD
Output Characteristics
- Drain-Source Voltage (V)
- Source-Drain Voltage (V)
v Temperature
0.6
1
0
10V 8V 7V 6V
ZXM62N03G
DS(on)
0.8
50
T=150°C
T=25°C
VGS(th)
RDS(on)
100
and V
1.0
10
VGS=VDS
ID=250uA
VGS=10V
ID=2.2A
150
1.2
GS(th)
VGS
5V
4V
3V
4.5V
3.5V
100
200
1.4