ZXM62N03GTA Diodes Inc, ZXM62N03GTA Datasheet - Page 6

• Manufacturer Part Number: ZXM62N03GTA
• Description: MOSFET Power 30V N-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM62N03GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 6.4 ns
• Rise Time: 5.6 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXM62N03G
900
800
700
600
500
400
300
200
100
Capacitance v Drain-Source Voltage
0
0.1
Basic Gate Charge Waveform
Switching Time Waveforms
V
DS
- Drain Source Voltage (V)
1
TYPICAL CHARACTERISTICS
10
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
100
6
4.5
3.5
2.5
1.5
0.5
Switching Time Test Circuit
5
4
3
2
1
0
Gate-Source Voltage v Gate Charge
0
Gate Charge Test Circuit
I
D
=2.2A
1
Q -Charge (nC)
2
V
ISSUE 1 - OCTOBER 2002
DS
=16V
3
4
5
6