ZXM62N03GTA Diodes Inc, ZXM62N03GTA Datasheet - Page 2

• Manufacturer Part Number: ZXM62N03GTA
• Description: MOSFET Power 30V N-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM62N03GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 6.4 ns
• Rise Time: 5.6 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATING
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXM62N03G
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
(V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=25°C)(b)
=70°C)(b)
=25°C)(a)
2
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
62.5
4.7
3.8
3.4
2.6
2.0
3.9
32
30
16
16
16
31
20
ISSUE 1 - OCTOBER 2002
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C
W
W
V
V
A
A
A
A