SUD40N08-16-E3 Vishay, SUD40N08-16-E3 Datasheet

MOSFET Power 80V 40A 100W

SUD40N08-16-E3

Manufacturer Part Number
SUD40N08-16-E3
Description
MOSFET Power 80V 40A 100W
Manufacturer
Vishay
Datasheet

Specifications of SUD40N08-16-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
40A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD40N08-16-E3
Manufacturer:
V1SHAY
Quantity:
20 000
Part Number:
SUD40N08-16-E3
0
Company:
Part Number:
SUD40N08-16-E3
Quantity:
70 000
Notes
a.
b.
Document Number: 71323
S-40272—Rev. C, 23-Feb-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
DS
ti
80
(V)
t A bi
t
a
a
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
G
Top View
TO-252
J
J
0.016 @ V
= 175_C)
= 175_C)
D
Parameter
Parameter
r
DS(on)
N-Channel 80-V (D-S) 175_C MOSFET
S
b
b
GS
(W)
= 10 V
Drain Connected to Tab
A
= 25_C UNLESS OTHERWISE NOTED)
T
Steady State
L = 0.1 mH
T
T
T
t v 10 sec
C
C
C
A
= 125_C
I
= 25_C
= 25_C
= 25_C
D
40
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
I
AR
thJA
DS
GS
AR
D
D
S
D
G
stg
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R
D
S
Typical
0.85
15
40
g
Tested
−55 to 175
Limit
"20
136
80
40
30
60
40
40
80
3 a
b
Maximum
Vishay Siliconix
SUD40N08-16
1.1
18
50
www.vishay.com
Unit
Unit
_C/W
mJ
_C
C/W
W
W
V
V
A
1

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SUD40N08-16-E3 Summary of contents

Page 1

... DS DS(on) 80 0.016 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD40N08-16 SUD40N08-16—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... SUD40N08-16 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V − Drain-to-Source Voltage (V) DS Document Number: 71323 S-40272—Rev. C, 23-Feb-04 100 0.04 25_C 0.03 125_C 0.02 0.01 0.00 80 100 iss SUD40N08-16 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge V ...

Page 4

... SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 T − Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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