SUD40N08-16-E3 Vishay, SUD40N08-16-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD40N08-16-E3
• Description: MOSFET Power 80V 40A 100W
• Manufacturer: Vishay

Specifications of SUD40N08-16-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
a.
b.
c.
www.vishay.com
SUD40N08-16
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
2
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
a
Parameter
g
c
c
c
c
c
b
b
b
b
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
R
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
C
I
V
V
V
V
V
D
= 25_C)
V
DS
DS
GS
GS
DS
DS
GS
^ 40 A, V
I
= 80 V, V
= 80 V, V
F
= 40 V, V
V
= 10 V, I
= 10 V, I
= 0 V, V
V
V
V
V
V
V
DS
V
V
= 40 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
F
GS
DS
= 0 V, V
= 40 A, V
= V
= 40 V, R
= 40 V, R
= 0 V, I
= 80 V, V
= 5 V, V
,
= 10 V, I
= 15 V, I
GEN
DS
D
D
GS
GS
GS
GS
GS
= 40 A, T
= 40 A, T
, I
= 25 V, F = 1 MHz
= 10 V, R
= 0 V, T
= 0 V, T
GS
D
= 10 V, I
D
GS
GS
D
= 250 mA
D
L
L
GS
= 250 mA
= "20 V
= 40 A
= 1.0 W
= 1.0 W
= 40 A
= 10 V
= 0 V
= 0 V
,
J
J
J
J
= 125_C
= 175_C
D
D
g
= 125_C
= 175_C
= 2.5 W
= 40 A
Min
2.0
0.5
80
60
Typ
0.013
1960
370
200
1.0
45
42
13
12
52
25
10
45
7
S-40272—Rev. C, 23-Feb-04
a
Document Number: 71323
"100
Max
0.016
0.027
0.037
250
4.0
2.7
1.5
50
60
20
80
38
15
60
70
1
Unit
nC
nA
mA
m
pF
ns
ns
ns
W
W
V
V
A
S
A
V