SUD40N08-16-E3 Vishay, SUD40N08-16-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD40N08-16-E3
• Description: MOSFET Power 80V 40A 100W
• Manufacturer: Vishay

Specifications of SUD40N08-16-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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SUD40N08-16
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
4
0.01
2.4
2.0
1.6
1.2
0.8
0.4
0.0
50
40
30
20
10
0.1
0
−50 −25
2
1
0
10
On-Resistance vs. Junction Temperature
−4
V
I
Duty Cycle = 0.5
0.2
0.1
D
GS
Maximum Avalanche Drain Current
25
= 40 A
= 10 V
Single Pulse
T
0
J
0.05
T
vs. Case Temperature
50
C
− Junction Temperature (_C)
− Case Temperature (_C)
25
0.02
75
50
10
−3
75
100
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
125
150
150
10
−2
175
175
Square Wave Pulse Duration (sec)
10
−1
1000
100
0.1
10
0.01
1
100
0.1
10
0.1
1
Limited by r
0
Source-Drain Diode Forward Voltage
V
DS
DS(on)
V
T
SD
J
Single Pulse
0.3
= 150_C
T
− Drain-to-Source Voltage (V)
Safe Operating Area
C
1
− Source-to-Drain Voltage (V)
1
= 25_C
0.6
S-40272—Rev. C, 23-Feb-04
Document Number: 71323
10
10
0.9
T
J
= 25_C
100
30
10 ms
100 ms
1 ms
10 ms
100 ms
1 s, dc
1.2