SUD40N08-16-E3 Vishay, SUD40N08-16-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD40N08-16-E3
• Description: MOSFET Power 80V 40A 100W
• Manufacturer: Vishay

Specifications of SUD40N08-16-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71323
S-40272—Rev. C, 23-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3000
2500
2000
1500
1000
100
500
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
C
20
C
2
V
V
= −55_C
DS
rss
DS
20
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
Transconductance
D
V
− Drain Current (A)
GS
Capacitance
40
4
= 10 thru 7 V
C
40
oss
3, 4 V
60
6
C
iss
60
80
8
125_C
25_C
6 V
5 V
100
10
80
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 40 A
1
On-Resistance vs. Drain Current
= 10 V
20
15
V
GS
Q
Transfer Characteristics
g
2
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
40
30
3
T
Vishay Siliconix
25_C
C
SUD40N08-16
= 125_C
4
60
45
V
GS
5
= 10 V
80
60
www.vishay.com
−55_C
6
100
75
7
3