SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet - Page 4
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SUD50N03-06AP-E3
Manufacturer Part Number
SUD50N03-06AP-E3
Description
MOSFET Power 30V 90A 83W
Manufacturer
Vishay
Datasheet
1.SUD50N03-06AP-E3.pdf
(7 pages)
Specifications of SUD50N03-06AP-E3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
10000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
90A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.8mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.2V
Power Dissipation Pd
10W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD50N03-06AP-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Company:
Part Number:
SUD50N03-06AP-E3
Manufacturer:
TI
Quantity:
1 225
www.vishay.com
4
SUD50N03-06AP
Vishay Siliconix
100.000
10.000
1.000
0.100
0.010
0.001
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.0
–50
–25
T
Source-Drain Diode Forward Voltage
J
0.2
= 150_C
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
25
J
– Temperature (_C)
50
0.6
I
D
75
= 250 mA
100
0.8
T
J
125
= 25_C
0.001
1000
0.10
0.01
100
1.0
10
_
1
0.1
150
*V
GS
175
1.2
*Limited by r
Single Pulse
T
u minimum V
New Product
A
= 25_C
Safe Operating Area
1
DS(on)
GS
V
DS
at which r
(V)
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
600
500
400
300
200
100
0
0.001
is specified
0
Single Pulse Power, Junction-to-Ambient
1
10s
100s
10 µs
100 µs
100 ms
1s
DC
1 ms
10 ms
0.01
r
2
DS(on)
100
V
25_C
GS
3
0.1
– Gate-to-Source Voltage (V)
vs V
4
Time (sec)
125_C
GS
vs. Temperature
5
1
S–52237—Rev. A, 24-Oct-05
Document Number: 73540
6
10
7
Single Pulse
T
8
A
100
= 25_C
9
1000
10