SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet - Page 5
![MOSFET Power 30V 90A 83W](/photos/19/8/190868/4243264_sml.jpg)
SUD50N03-06AP-E3
Manufacturer Part Number
SUD50N03-06AP-E3
Description
MOSFET Power 30V 90A 83W
Manufacturer
Vishay
Datasheet
1.SUD50N03-06AP-E3.pdf
(7 pages)
Specifications of SUD50N03-06AP-E3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
10000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
90A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.8mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.2V
Power Dissipation Pd
10W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD50N03-06AP-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Company:
Part Number:
SUD50N03-06AP-E3
Manufacturer:
TI
Quantity:
1 225
Document Number: 73540
S–52237—Rev. A, 24-Oct-05
100
75
50
25
0
0
25
T
50
C
Current De-Rating
Limited by Package
– Case Temperature (_C)
75
100
125
150
_
175
New Product
90
80
70
60
50
40
30
20
10
0
25
50
T
C
– Case Temperature (_C)
75
SUD50N03-06AP
Power De-Rating
Vishay Siliconix
100
125
www.vishay.com
150
175
5