SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet - Page 6

• Manufacturer Part Number: SUD50N03-06AP-E3
• Description: MOSFET Power 30V 90A 83W
• Manufacturer: Vishay

Specifications of SUD50N03-06AP-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 10000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.8mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.2V
• Power Dissipation Pd: 10W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?73540.
www.vishay.com
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SUD50N03-06AP
Vishay Siliconix
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For related documents such as package/tape drawings, part marking, and reliability data, see
New Product
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S–52237—Rev. A, 24-Oct-05
Document Number: 73540
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