SI3443CDV-T1-GE3 Vishay, SI3443CDV-T1-GE3 Datasheet
SI3443CDV-T1-GE3
Specifications of SI3443CDV-T1-GE3
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SI3443CDV-T1-GE3 Summary of contents
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... 2 TSOP-6 Top View 2.85 mm Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free) Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si3443CDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... New Product 4 3 3 2 1200 900 600 = 4.5 V 300 1.4 1 1.0 0.8 0 Si3443CDV Vishay Siliconix T = 125 ° ° ° 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 4.7 A ...
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... Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.5 1.3 1.1 0.9 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.15 0.12 0. °C J 0.06 0.03 0.00 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74495 S09-0535-Rev. B, 06-Apr-09 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si3443CDV Vishay Siliconix 100 125 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 150 ...
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... Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...