SI3443CDV-T1-GE3 Vishay, SI3443CDV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3443CDV-T1-GE3
• Description: MOSFET Small Signal 20V 4.7A 3.2W 60mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SI3443CDV-T1-GE3

• Transistor Polarity: P-Channel
• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Gate Charge Qg: 8.26 nC
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 5.97 A
• Power Dissipation: 3.2 W
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Continuous Drain Current Id: -4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Power Dissipation Pd: 3.2W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TSOP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74495
S09-0535-Rev. B, 06-Apr-09
0.20
0.15
0.10
0.05
0.00
20
16
12
5
4
3
2
1
0
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
0
0
0
I
D
= 4.7 A
V
GS
2
4
V
= 2.5 V
1
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
V
- Drain Current (A)
Gate Charge
8
4
DS
V
= 10 V
GS
2
V
= 5 V thru 3.5 V
GS
12
6
= 4.5 V
V
V
V
V
GS
GS
GS
GS
V
= 2.0 V
3
= 3.0 V
= 2.5 V
= 1.5 V
DS
16
8
= 16 V
New Product
20
10
4
1200
900
600
300
1.4
1.2
1.0
0.8
0.6
4.0
3.2
2.4
1.6
0.8
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
C
0.6
4
oss
V
V
T
DS
T
GS
Transfer Characteristics
0
C
T
J
C
- Junction Temperature (°C)
= 25 °C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 125 °C
25
Capacitance
1.2
8
50
C
V
I
Vishay Siliconix
D
iss
GS
= 4.7 A
Si3443CDV
1.8
12
= 4.5 V
75
T
C
www.vishay.com
100
V
I
D
= - 55 °C
GS
= 3.4 A
2.4
16
= 2.5 V
125
150
3.0
20
3