SI3443CDV-T1-GE3 Vishay, SI3443CDV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3443CDV-T1-GE3
• Description: MOSFET Small Signal 20V 4.7A 3.2W 60mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SI3443CDV-T1-GE3

• Transistor Polarity: P-Channel
• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Gate Charge Qg: 8.26 nC
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 5.97 A
• Power Dissipation: 3.2 W
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Continuous Drain Current Id: -4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Power Dissipation Pd: 3.2W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TSOP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si3443CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74495.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.1
0.02
0.02
0.2
0.05
Duty Cycle = 0.5
Duty Cycle = 0.5
0.1
0.2
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
S09-0535-Rev. B, 06-Apr-09
t
2
Document Number: 74495
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 110 °C/W
1000
10