2N7002K-T1-GE3 Vishay, 2N7002K-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: 2N7002K-T1-GE3
• Description: MOSFET Small Signal 60V 300mA 0.35W 2.0ohm @ 10V
• Manufacturer: Vishay

Specifications of 2N7002K-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 2 Ohms
• Gate Charge Qg: 0.4 nC
• Forward Transconductance Gfs (max / Min): 100 mS
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 190mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N7002K
Vishay Siliconix
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
a
a, b, c
a
a
a
A
= 25 °C, unless otherwise noted
Symbol
R
V
I
t
t
I
C
I
DS(on)
C
V
GS(th)
D(on)
V
C
d(on)
d(off)
GSS
DSS
Q
g
oss
DS
SD
rss
iss
fs
g
I
D
V
V
≅ 200 mA, V
DS
DS
= 0 V, V
= 60 V, V
V
V
V
V
V
V
V
V
V
V
V
I
V
GS
S
V
V
DS
DS
GS
DS
V
DS
DS
GS
GS
DS
DD
DS
DS
DS
= 200 mA, V
GS
Test Conditions
= 0 V, V
= 0 V, V
= 4.5 V, I
= 10 V, I
= 0 V, V
= 10 V, I
= 10 V, V
= V
= 10 V, V
= 4.5 V, V
= 30 V, R
= 0 V, V
= 60 V, V
I
= 25 V, V
= 0 V, I
D
GS
f = 1 MHz
GS
≅ 250 mA
GS
GEN
= ± 10 V, T
, I
= 0 V , T
GS
GS
GS
D
D
D
D
GS
D
= 10 V, R
GS
DS
L
DS
= 500 mA
= 250 µA
GS
= 200 mA
GS
= 10 µA
= 200 mA
= ± 20 V
= ± 15 V
GS
= ± 10 V
= 150 Ω
= ± 5 V
= 7.5 V
= 4.5 V
= 10 V
= 0 V
= 0 V
= 0 V
J
J
= 125 °C
= 85 °C
G
= 10 Ω
Min.
800
500
100
60
1
S09-0857-Rev. E, 18-May-09
Limits
Typ.
Document Number: 71333
0.4
2.5
30
6
a
± 1000
± 150
± 100
Max.
± 10
500
2.5
1.3
0.6
25
35
1
1
2
4
Unit
mA
mS
nC
µA
nA
µA
pF
ns
Ω
V
V