2N7002K-T1-GE3 Vishay, 2N7002K-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: 2N7002K-T1-GE3
• Description: MOSFET Small Signal 60V 300mA 0.35W 2.0ohm @ 10V
• Manufacturer: Vishay

Specifications of 2N7002K-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 2 Ohms
• Gate Charge Qg: 0.4 nC
• Forward Transconductance Gfs (max / Min): 100 mS
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 190mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71333
S09-0857-Rev. E, 18-May-09
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
7
6
5
4
3
2
1
0
0.0
0
0
V
V
I
D
GS
DS
= 250 mA
0.1
On-Resistance vs. Drain Current
= 4.5 V
= 10 V
200
1
V
V
DS
Output Characteristics
Q
GS
I
g
- Drain-to-Source Voltage (V)
D
0.2
- Total Gate Charge (nC)
= 10 V
- Drain Current (mA)
400
Gate Charge
2
0.3
600
3
0.4
7 V
V
GS
6 V
800
= 10 V
4
0.5
5 V
4 V
3 V
1000
0.6
5
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
1
5
V
V
DS
GS
T
Transfer Characteristics
C
0
J
C
rss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
2
V
GS
2 5
Capacitance
10
= 10 V at 500 mA
T
C
J
V
5 0
iss
3
Vishay Siliconix
= - 55 °C
GS
= 0 V
15
7 5
4
2N7002K
V
at 200 mA
125 °C
www.vishay.com
100
GS
20
= 4.5 V
25 °C
5
125
150
25
6
3