2N7002K-T1-GE3 Vishay, 2N7002K-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: 2N7002K-T1-GE3
• Description: MOSFET Small Signal 60V 300mA 0.35W 2.0ohm @ 10V
• Manufacturer: Vishay

Specifications of 2N7002K-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 2 Ohms
• Gate Charge Qg: 0.4 nC
• Forward Transconductance Gfs (max / Min): 100 mS
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 190mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71333.
Document Number: 71333
S09-0857-Rev. E, 18-May-09
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
2N7002K
www.vishay.com
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