2N7002K-T1-GE3 Vishay, 2N7002K-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: 2N7002K-T1-GE3
• Description: MOSFET Small Signal 60V 300mA 0.35W 2.0ohm @ 10V
• Manufacturer: Vishay

Specifications of 2N7002K-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 2 Ohms
• Gate Charge Qg: 0.4 nC
• Forward Transconductance Gfs (max / Min): 100 mS
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 190mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N7002K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
1000
0.1
- 0.2
- 0.4
- 0.6
- 0.8
100
2
1
0.4
0.2
0.0
10
10
1
0.0
- 50
Threshold Voltage Variance Over Temperature
-4
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
V
Source-Drain Diode Forward Voltage
- 25
GS
T
J
= 0 V
0.3
= 125 °C
Single Pulse
V
SD
T
0
J
- Source-to-Drain Voltage (V)
10
- Junction Temperature (°C)
-3
2 5
0.6
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
T
= 250 µA
T
J
0.9
J
= - 55 °C
7 5
= 25 °C
10
-2
100
1.2
125
Square Wave Pulse Duration (s)
1.5
150
10
-1
2.5
1.5
0.5
3
2
1
0
5
4
3
2
1
0
0.01
1
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-Source Voltage
I
D
0.1
2
= 200 mA
V
GS
- Gate-to-Source Voltage (V)
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
1
- T
Time (s)
A
t
I
1
D
= P
T
= 500 mA
A
t
2
DM
= 25 °C
S09-0857-Rev. E, 18-May-09
6
Z
10
thJA
Document Number: 71333
th JA
100
t
t
1
2
(t)
= 350 °C/W
8
100
600
600
10