PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN039-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS,115

• Input Capacitance (ciss) @ Vds: 1847pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 71 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5586-2

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN039-100YS_2
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN039-100YS LFPAK
Symbol
S
S
S
G
D
Pinning information
Ordering information
Package
Name
Description
source
source
source
gate
mounting base; connected to
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
plastic single-ended surface-mounted package (LFPAK); 4 leads
drain-source
on-state resistance
Description
Quick reference
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 April 2010
…continued
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Conditions
V
T
V
T
j
j
GS
GS
= 100 °C; see
= 25 °C; see
Simplified outline
= 10 V; I
= 10 V; I
SOT669 (LFPAK)
D
D
1 2 3 4
= 15 A;
= 15 A;
Figure 13
Figure 12
mb
PSMN039-100YS
Graphic symbol
Min
-
-
Typ
-
30.8
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
71
39.5
Version
SOT669
D
S
Unit
mΩ
mΩ
2 of 15