PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN039-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS,115

• Input Capacitance (ciss) @ Vds: 1847pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 71 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5586-2

NXP Semiconductors
PSMN039-100YS_2
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
180
150
120
90
60
30
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
5
20V
10
10
V
GS
80V
(V) = 4.6
15
20
20
Q
V
All information provided in this document is subject to legal disclaimers.
DS
G
003aae099
25
003aae101
(nC)
5.5
= 50V
10
5
I
D
(A)
30
30
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Drain-source on-state resistance as a function
(pF)
C
10
10
10
10
4
3
2
10
of drain current; typical values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN039-100YS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
003aae098
DS
003aaa508
(V)
C
C
C
oss
rss
iss
10
2
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