PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN039-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS,115

• Input Capacitance (ciss) @ Vds: 1847pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 71 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5586-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN039-100YS_2
Product data sheet
Symbol
R
Z
Fig 4.
th(j-mb)
th
(K/W)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
Thermal characteristics
-6
Parameter
thermal resistance from
junction to mounting
base
0.05
0.02
single shot
δ = 0.5
0.2
0.1
10
-5
Conditions
see
Figure 4
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
10
-3
10
-2
PSMN039-100YS
Min
-
10
P
-1
Typ
1
t
p
T
© NXP B.V. 2010. All rights reserved.
t
p
(s)
003aae093
δ =
Max
2.03
t
T
p
t
1
Unit
K/W
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