PSMN3R3-40YS,115 NXP Semiconductors, PSMN3R3-40YS,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN3R3-40YS,115
• Description: MOSFET N-CH 40V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS,115

• Input Capacitance (ciss) @ Vds: 2754pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 97 A, 100 A
• Power Dissipation: 117 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5590-2

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN3R3-40YS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
150
100
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
003aae208
mb
(°C)
Rev. 04 — 25 October 2010
200
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 40 V; unclamped; R
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
p
p
Fig 2.
≤ 10 µs; T
≤ 10 µs; T
j
j
P
≤ 175 °C
≤ 175 °C; R
(%)
mb
mb
j(init)
der
120
80
40
= 100 °C; see
= 25 °C; see
0
Figure 2
= 25 °C; I
function of mounting base temperature
Normalized total power dissipation as a
0
mb
mb
= 25 °C;
= 25 °C
GS
GS
D
50
= 20 kΩ
= 100 A;
= 50 Ω
Figure 1
Figure 1
PSMN3R3-40YS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
260
Max
40
40
20
97
100
546
117
100
546
162
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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