FDMS7670AS Fairchild Semiconductor, FDMS7670AS Datasheet - Page 3

• Manufacturer Part Number: FDMS7670AS
• Description: MOSFET N-CH 30V SYNCFET POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7670AS

• Input Capacitance (ciss) @ Vds: 4225pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 m Ohms
• Forward Transconductance Gfs (max / Min): 300 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7670AS Rev.C1
Typical Characteristics
150
120
150
120
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
0
0
Figure 1.
0.0
-75
1.0
Figure 5. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 21 A
-50
= 5 V
vs Junction Temperature
= 10 V
1.5
V
T
V
-25
J
DS
GS
On-Region Characteristics
,
0.5
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
J
2.0
0
= 125
V
V
V
GS
GS
GS
= 10 V
= 4.5 V
= 4 V
25
o
C
V
1.0
2.5
GS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
50
= 3.5 V
T
J
T
= 25 °C unless otherwise noted
J
3.0
= -55
75
T
J
= 25
1.5
o
o
100 125 150
C
C )
o
C
3.5
V
GS
= 3 V
2.0
4.0
3
0.001
0.01
200
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
10
8
6
4
2
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
= 125
= 0 V
V
V
0.2
SD
GS
30
, BODY DIODE FORWARD VOLTAGE (V)
V
o
Normalized On-Resistance
On-Resistance vs Gate to
C
= 3 V
GS
I
Source Voltage
4
D
Source to Drain Diode
,
,
I
GATE TO SOURCE VOLTAGE (V)
D
DRAIN CURRENT (A)
T
= 21 A
0.4
J
= -55
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
60
T
J
= 25
V
o
GS
C
0.6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
6
= 3.5 V
o
C
T
T
J
J
= 125
90
= 25
0.8
V
o
o
GS
C
C
= 4 V
8
V
120
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GS
V
1.0
GS
= 4.5 V
= 10 V
150
1.2
10