FDMS7670AS Fairchild Semiconductor, FDMS7670AS Datasheet - Page 4

• Manufacturer Part Number: FDMS7670AS
• Description: MOSFET N-CH 30V SYNCFET POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7670AS

• Input Capacitance (ciss) @ Vds: 4225pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 m Ohms
• Forward Transconductance Gfs (max / Min): 300 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7670AS Rev.C1
Typical Characteristics
0.01
200
100
0.1
40
10
10
10
Figure 7.
8
6
4
2
0
1
0.01
1
0.01
0
I
THIS AREA IS
LIMITED BY r
D
Figure 9.
Figure 11. Forward Bias Safe
= 21 A
SINGLE PULSE
T
R
T
Switching Capability
V
10
J
A
0.1
DS
Gate Charge Characteristics
JA
= MAX RATED
0.1
= 25
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
= 125
Unclamped Inductive
DS(on)
, TIME IN AVALANCHE (ms)
Q
o
g
C
, GATE CHARGE (nC)
o
C/W
T
20
V
J
DD
= 125
1
= 10 V
1
T
J
o
= 25
C
T
30
J
o
= 25 °C unless otherwise noted
V
C
T
DD
J
10
= 100
10
= 15 V
V
40
o
DD
C
= 20 V
100 s
100 ms
1 s
10 s
1 ms
10 ms
DC
100
100
300
50
200
4
10000
1000
120
5000
1000
100
90
60
30
100
0.5
10
0
Figure 10.
60
1
25
10
0.1
Figure 12.
-4
f = 1 MHz
V
Figure 8.
SINGLE PULSE
R
T
GS
Current vs Case Temperature
A
JA
Limited by Package
= 25
= 0 V
10
= 125
-3
V
50
V
o
DS
GS
C
Power Dissipation
Maximum Continuous Drain
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
o
C
= 4.5 V
C/W
10
t, PULSE WIDTH (sec)
Single Pulse Maximum
,
Capacitance vs Drain
CASE TEMPERATURE (
-2
V
75
GS
1
10
= 10 V
-1
R
100
1
JC
= 1.9
10
o
C )
o
C/W
125
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V
10
GS
100
= 10 V
C
C
C
oss
iss
rss
150
1000
30