BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet - Page 5

• Manufacturer Part Number: BUK662R4-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R4-40C,118

• Input Capacitance (ciss) @ Vds: 11334pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK662R4-40C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.05
0.02
0.1
0.2
single shot
Parameter
thermal resistance from
junction to mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 2 November 2010
Conditions
see
Figure 4
10
-3
10
-2
BUK662R4-40C
Min
-
N-channel TrenchMOS FET
10
P
-1
Typ
-
t
p
T
tp (s)
© NXP B.V. 2010. All rights reserved.
003aae587
δ =
Max
0.57
T
t
p
t
1
Unit
K/W
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