BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK662R4-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R4-40C,118

• Input Capacitance (ciss) @ Vds: 11334pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK662R4-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
200
160
120
(S)
g
80
40
fs
(A)
0
250
200
150
100
I
D
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
50
0
0
Characteristics
0
Parameter
source-drain voltage
reverse recovery time
recovered charge
10.0
10
0.5
5.0
…continued
4.5
20
1
30
V
GS
1.5
Conditions
I
see
I
V
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S
S
DS
003aae582
(V) = 4.0
= 25 A; V
= 20 A; dI
I
D
003aae701
V
Figure 16
= 25 V
(A)
DS
(V)
3.8
3.6
3.4
3.2
Rev. 2 — 2 November 2010
40
2
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
250
200
150
100
I
D
50
10
8
6
4
2
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
5
T
j
= 175 °C
2
BUK662R4-40C
Min
-
-
-
N-channel TrenchMOS FET
10
T
j
4
Typ
0.8
60
104
= 25 °C
15
© NXP B.V. 2010. All rights reserved.
V
GS
V
003aae703
003aae597
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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