BUK662R4-40C,118 NXP Semiconductors, BUK662R4-40C,118 Datasheet - Page 9

• Manufacturer Part Number: BUK662R4-40C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R4-40C,118

• Input Capacitance (ciss) @ Vds: 11334pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK662R4-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
1E+5
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003a a e 592
(V)
C
C
C
iss
oss
rss
10
Rev. 2 — 2 November 2010
2
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Source (diode forward) current as a function of
(A)
V
(V)
I
S
100
GS
10
80
60
40
20
8
6
4
2
0
0
gate charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
T
0.3
50
j
= 175 °C
14V
BUK662R4-40C
100
N-channel TrenchMOS FET
0.6
V
DS
= 32V
150
T
0.9
j
= 25 °C
© NXP B.V. 2010. All rights reserved.
Q
V
003aae586
003aae563
G
SD
(nC)
(V)
200
1.2
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