STD44N4LF6 STMicroelectronics, STD44N4LF6 Datasheet - Page 4

MOSFET N-CH 40V 44A DPAK

STD44N4LF6

Manufacturer Part Number
STD44N4LF6
Description
MOSFET N-CH 40V 44A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STD44N4LF6

Input Capacitance (ciss) @ Vds
1190pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
50W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.3 mOhms
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
44 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11098-2

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Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
I
C
DS(on)
GS(th)
C
C
Q
Q
GSS
DSS
R
Q
oss
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Static
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 17171 Rev 2
V
V
V
V
(see
f = 1 MHz open drain
I
V
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
= 25 V, f=1 MHz,
= 0 V
= 20 V, I
= 10 V
Test conditions
Test conditions
= 20 V
= 20 V,Tc = 125 °C
= ± 20 V
= V
= 5 V, I
= 10 V, I
Figure
GS
, I
D
14)
D
D
D
= 20 A
= 250 µA
GS
= 40 A
= 20 A
= 0
Min.
Min
40
1
-
-
-
Typ.
11.3
1190
Typ.
200
110
8.9
4.3
3.1
22
-
-
-
-
5
STD44N4LF6
Max.
Max.
±
12.5
2.5
100
10
18
1
-
-
-
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V

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