STD44N4LF6 STMicroelectronics, STD44N4LF6 Datasheet - Page 6

• Manufacturer Part Number: STD44N4LF6
• Description: MOSFET N-CH 40V 44A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD44N4LF6

• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 50W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 44 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11098-2

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
100
BV
(A)
10
I
I
D
(norm)
D
1
1.10
1.00
1.05
0.95
0.90
180
160
100
140
120
0.1
(A)
DSS
80
40
20
60
0
-75
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
-25
1
1
I
D
V
25
=1mA
GS
=10V
2
VDSS
10
75
Tc=25°C
Single pulse
Tj=175°C
vs temperature
3
125
V
DS
V
4V
(V)
3V
DS
10ms
100µs
1ms
Doc ID 17171 Rev 2
AM08903v1
AM08906v1
(V)
AM08904v1
T
6V
5V
J
(°C)
Figure 3.
Figure 5.
Figure 7.
10
10
R
I
10
D
DS(on)
(mΩ)
K
180
160
140
120
100
-2
-1
(A)
80
60
40
20
9.0
7.0
8.5
8.0
7.5
9.5
-5
0
0.2
Single pulse
0.1
0
0
δ=0.5
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
0.01
-4
2
10
0.02
V
10
GS
V
-3
DS
4
=10V
0.05
=4V
20
10
-2
6
30
10
-1
8
280DPB
STD44N4LF6
40
t
V
p
(s)
GS
AM08905v1
(V)
AM08907v1
I
D
(A)