STD44N4LF6 STMicroelectronics, STD44N4LF6 Datasheet - Page 8

• Manufacturer Part Number: STD44N4LF6
• Description: MOSFET N-CH 40V 44A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD44N4LF6

• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 50W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 44 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11098-2

Test circuits
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Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
1000
Doc ID 17171 Rev 2
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
STD44N4LF6
off
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD