STD44N4LF6 STMicroelectronics, STD44N4LF6 Datasheet - Page 7

• Manufacturer Part Number: STD44N4LF6
• Description: MOSFET N-CH 40V 44A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD44N4LF6

• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 50W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 44 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11098-2

STD44N4LF6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
V
(V)
(V)
1.2
1.0
0.8
0.2
V
0.6
0.4
12
10
GS
0.8
0.6
0.4
1.0
0.2
SD
6
2
8
4
0
0
-75
0
0
0
T
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
T
J
J
=175°C
=25°C
5
-25
5
10
V
I
DD
D
10
15
=40A
=20V
25
20
15
25
I
D
75
=250µA
T
20
J
30
=-55°C
125
35
25
40
Doc ID 17171 Rev 2
Q
AM08910v1
AM08908v1
AM08912v1
T
I
SD
g
J
(nC)
(°C)
(A)
Figure 11. Normalized on resistance vs
(norm)
R
1000
DS(on)
100
(pF)
10
1.5
2.0
1.0
0.5
C
0
-75
0
Capacitance variations
temperature
-25
10
25
Electrical characteristics
V
20
I
GS
D
=20A
=10V
75
30
125
V
DS
AM08909v1
AM08911v1
T
(V)
J
Ciss
Coss
Crss
(°C)
7/15