STB5N52K3 STMicroelectronics, STB5N52K3 Datasheet - Page 20

• Manufacturer Part Number: STB5N52K3
• Description: MOSFET N-CH 30V 4.4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STB5N52K3

• Input Capacitance (ciss) @ Vds: 545pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 525 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11091-2

Package mechanical data
20/23
Table 15.
Figure 30. DPAK footprint
b. All dimension are in millimeters
Dim.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
R
E
F
T
DPAK (TO-252) tape and reel mechanical data
Min.
10.4
1.65
2.55
0.25
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
6.7
Tape
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
mm
(b)
Doc ID 16952 Rev 2
6.7
Max.
10.6
12.1
1.85
2.75
0.35
16.3
1.6
7.6
4.1
8.1
2.1
7
3
Dim.
G
A
B
C
D
N
T
3
Base qty.
Bulk qty.
1.6
1.6
Min.
12.8
20.2
16.4
1.5
50
2.3
2.3
Reel
mm
Max.
2500
2500
13.2
18.4
22.4
330
AM08850v1