STB5N52K3 STMicroelectronics, STB5N52K3 Datasheet - Page 7

• Manufacturer Part Number: STB5N52K3
• Description: MOSFET N-CH 30V 4.4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STB5N52K3

• Input Capacitance (ciss) @ Vds: 545pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 525 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11091-2

STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Figure 8.
Figure 10. Normalized B
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
BV
(norm)
1.00
1.05
0.95
0.90
V
1.10
(V)
DSS
(A)
GS
I
10
12
10
D
0
8
6
4
2
0
8
6
4
2
0
-75
0
V
Output characteristics
DS
5
5
-25
10
10
I
25
D
V
=1mA
I
V
DD
D
15
15
GS
=4.4A
VDSS
=420V
=10V
75
20
20
vs temperature
125
25
25
V
GS
7V
5V
Q
6V
Doc ID 16952 Rev 2
V
T
g
(nC)
AM08840v1
AM08842v1
AM08844v1
J
DS
(°C)
0
400
100
350
300
250
200
150
50
(V)
Figure 9.
Figure 11. Static drain-source on resistance
R
I
1000
D
DS(on)
100
(pF)
1.30
1.00
(A)
(Ω)
1.40
1.20
1.15
1.10
1.05
1.45
1.35
1.25
10
C
6
5
3
2
0
1
7
4
1
0
0.1
0
Transfer characteristics
1
2
1.0
1
3
V
V
GS
DS
4
2.0
=10V
Electrical characteristics
=15V
10
5
6
3.0
7
100
8
4.0
9
V
DS
AM08841v1
AM08843v1
AM08845v1
V
(V)
I
GS
Coss
D
Ciss
Crss
(A)
(V)
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