STB5N52K3 STMicroelectronics, STB5N52K3 Datasheet - Page 6

• Manufacturer Part Number: STB5N52K3
• Description: MOSFET N-CH 30V 4.4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STB5N52K3

• Input Capacitance (ciss) @ Vds: 545pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 525 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11091-2

Electrical characteristics
2.1
6/23
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area TO-220, D²PAK Figure 3.
Safe operating area TO-220FP
Safe operating area DPAK, IPAK
1
1
1
10
10
10
Tc=25°C
Tj=150°C
Single pulse
Tc=25°C
Single pulse
Tc=25°C
Tj=150°C
Tj=150°C
Single pulse
100
100
100
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 16952 Rev 2
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM08837v1
AM08838v1
AM08839v1
Figure 5.
Figure 7.
Thermal impedance TO-220, D²PAK
Thermal impedance TO-220FP
Thermal impedance DPAK, IPAK