STB5N52K3 STMicroelectronics, STB5N52K3 Datasheet - Page 22

• Manufacturer Part Number: STB5N52K3
• Description: MOSFET N-CH 30V 4.4A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STB5N52K3

• Input Capacitance (ciss) @ Vds: 545pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 525 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11091-2

Revision history
6
22/23
Revision history
Table 16.
14-Dec-2010
05-Jan-2010
Date
Document revision history
Revision
1
2
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
First release.
Document status promoted from preliminary data to datasheet.
Doc ID 16952 Rev 2
Changes