FGL35N120FTDTU Fairchild Semiconductor, FGL35N120FTDTU Datasheet

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FGL35N120FTDTU

Manufacturer Part Number
FGL35N120FTDTU
Description
IGBT 1200V 35A TO-264
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGL35N120FTDTU

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
368W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGL35N120FTD
1200V, 35A Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: V
• High Input Impedance
Applications
• Induction Heating And Microwave Oven
• Soft Switching Applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
= 1.68 V @ I
Description
Parameter
C
= 35A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
o
C
C
C
o
o
o
C
C
C
G
-55 to +150
-55 to +150
Ratings
Ratings
1200
0.34
± 25
105
368
147
300
0.9
25
70
35
40
C
E
February 2010
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

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FGL35N120FTDTU Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGL35N120FTD FGL35N120FTDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter Saturation Voltage CE(sat) ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery rr Current Q Diode Reverse Recovery Charge rr FGL35N120FTD Rev 25°C unless otherwise noted ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 17V 20V 15V 150 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter V ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 70A 35A 18A Gate-Emitter Voltage, V Figure 9. Capacitance Characteristics 8000 C ies 6000 4000 C oes 2000 C ...

Page 6

Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 2000 Common Emitter V = 600V 15V CC GE 1000 I = 35A 125 C C 100 50 ...

Page 7

Typical Performance Characteristics Figure 19. Forward Characteristics 125 0.2 0.0 0.5 1.0 1.5 Forward Voltage, V Figure 21. Stored Charge 1.4 1.2 µ di/dt = 200A/ s 1.0 di/dt = 100A/ 0.8 ...

Page 8

Mechanical Dimensions FGL35N120FTD Rev Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

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