FGL35N120FTDTU Fairchild Semiconductor, FGL35N120FTDTU Datasheet - Page 4

• Manufacturer Part Number: FGL35N120FTDTU
• Description: IGBT 1200V 35A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL35N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 368W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
180
150
120
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
90
60
30
80
60
40
20
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
C
C
C
Collector-EmitterCase Temperature, T
GE
GE
= 25
Characteristics
= 25
= 125
Temperature at Variant Current Level
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
50
2
1
20V
75
4
2
17V
15V
70A
35A
I
C
= 18A
100
CE
6
CE
3
10V
12V
9V
V
[V]
[V]
GE
C
= 8V
[
o
C
]
125
8
4
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
180
150
120
120
100
90
60
30
80
60
40
20
20
16
12
0
0
8
4
0
0
4
4
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
o
C
C
Gate-Emitter Voltage, V
35A
Gate-Emitter Voltage,V
I
2
C
8
6
= 18A
20V
70A
12
4
8
Common Emitter
T
C
17V
15V
GE
= 25
GE
10
16
CE
6
[V]
[V]
o
10V
12V
9V
V
[V]
C
GE
GE
= 8V
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20
12
8