FGL35N120FTDTU Fairchild Semiconductor, FGL35N120FTDTU Datasheet - Page 3

• Manufacturer Part Number: FGL35N120FTDTU
• Description: IGBT 1200V 35A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL35N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 368W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL35N120FTD Rev. A
Electrical Characteristics of the Diode
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Parameter
I
I
di/dt = 200A/µs
F
F
= 35A
= 35A,
Test Conditions
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Min.
-
-
-
-
-
-
-
-
Typ.
1292
3377
12.9
337
520
2.7
2.5
7.6
Max
3.4
www.fairchildsemi.com
-
-
-
-
-
-
-
Units
nC
ns
V
A