FGL35N120FTDTU Fairchild Semiconductor, FGL35N120FTDTU Datasheet - Page 5

• Manufacturer Part Number: FGL35N120FTDTU
• Description: IGBT 1200V 35A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL35N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 368W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
8000
6000
4000
2000
0.01
400
100
0.1
20
16
12
10
8
4
0
0
1
4
1
1
*Notes:
1. T
2. T
3. Single Pulse
Collector-Emitter Voltage, V
C
J
35A
Collector-Emitter Voltage, V
= 150
= 25
I
C
Gate-Emitter Voltage, V
= 18A
8
o
10
o
C
C
C
C
C
oes
ies
res
70A
12
100
Common Emitter
V
T
C
Common Emitter
T
GE
10
C
= 25
GE
= 0V, f = 1MHz
= 125
CE
16
CE
[V]
o
[V]
GE
C
1000
o
[V]
C
100
1ms
10 ms
10
DC
µ
µ
s
s
4000
20
30
5
Figure 8. Load Current vs. Frequency
Figure 10. Gate Charge Characteristics
Figure 12. Turn-on Characteristics vs.
150
120
200
100
15
12
90
60
30
20
9
6
3
0
0
1
0
0
Duty cycle : 50%
T
Power Dissipation = 147W
Common Emitter
T
C
C
= 100
= 25
Gate Resistance
t
r
o
o
50
10
C
C
Gate Resistance, R
Gate Charge, Q
t
d(on)
10
V
load Current : peak of square wave
CC
V
Frequency [kHz]
100
CC
20
= 600V
= 200V
Common Emitter
V
I
T
T
C
CC
C
C
150
= 35A
30
= 25
= 125
g
= 600V, V
100
[nC]
G
o
C
[ Ω ]
o
400V
C
600V
200
40
GE
www.fairchildsemi.com
= 15V
1000
250
50